ACPDUC12VE-HF

Marking：E12；Package：SOD-523F；SMD ESD Protection Diode

Features -Highcomponentdensity. -Surfacemountpackage. -Bi-directionalESDprotection. -Lowclampingvoltage. -AEC-Q101Qualified&PPAP.

ACPDUC12VEU-HF

Marking：E12；Package：SOD-523F；SMD ESD Protection Diode

Features -Highcomponentdensity. -Surfacemountpackage. -Uni-directionalESDprotection. -Lowclampingvoltage. -AEC-Q101Qualified&PPAP.

ACPDUC12V-HF

Marking：E12；Package：SOD-523F；SMD ESD Protection Diode

Features -Highcomponentdensity. -Surfacemountpackage. -Bi-directionalESDprotection. -Lowclampingvoltage. -AEC-Q101Qualified&PPAP.

DTC113Z

Marking：E12；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

PJE8412_R1_00001

Marking：E12；Package：SOT-523；30V N-Channel Enhancement Mode MOSFET – ESD Protected

Features RDS(ON),VGS@4.5V,ID@350mA

MIC2004-1.2YML-TR

Marking：E12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

IDWD120E120D7

Marking：E120MD7；Package：PG-TO247-2-STD-NA8.8；Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features •VRRM=1200V •IF=120A •1200Vemittercontrolledtechnology •MaximumjunctiontemperatureTvjmax=175°C •Lowforwardvoltage(VF) •Lowreverserecoverycharge •Ultrafastrecoverytimes •Softrecoverycharacteristics •Pb-freeleadplating;RoHScompliant •Humidity

IDWD120E65E7

Marking：E120EE7；Package：PG-TO247-2-STD-NA8.8；The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features •VRRM=650V •IF=120A •Lowandtemperaturestableforwardvoltage(VF) •Verysoftandfastrecovery •Lowreverserecoverycurrent(Irrm) •Humidityrobustdesign •Cosmicrayruggedness •MaximumjunctiontemperatureTvjmax=175°C •QualifiedaccordingtoJEDECfortarg

E12N60

Marking：E12N60；Package：TO-263；12A 600V N-channel Enhancement Mode Power MOSFET

E12N60

Marking：E12N60；Package：TO-263；12A 600V N-channel Enhancement Mode Power MOSFET