丝印：E12；Package：SOD-523F；SMD ESD Protection Diode

Features - High component density. - Surface mount package. - Bi-directional ESD protection. - Low clamping voltage. - AEC-Q101 Qualified & PPAP.

文件：471.27 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：E12；Package：SOD-523F；SMD ESD Protection Diode

Features - High component density. - Surface mount package. - Uni-directional ESD protection. - Low clamping voltage. - AEC-Q101 Qualified & PPAP.

文件：472.83 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：E12；Package：SOD-523F；SMD ESD Protection Diode

Features - High component density. - Surface mount package. - Bi-directional ESD protection. - Low clamping voltage. - AEC-Q101 Qualified & PPAP.

文件：471.25 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：E12；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：E12；Package：SOT-523；30V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@4.5V, ID@350mA

文件：385.08 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：E12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

丝印：E120MD7；Package：PG-TO247-2-STD-NA8.8；Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features • VRRM = 1200 V • IF = 120 A • 1200 V emitter controlled technology • Maximum junction temperature Tvjmax = 175°C • Low forward voltage (VF) • Low reverse recovery charge • Ultrafast recovery times • Soft recovery characteristics • Pb-free lead plating; RoHS compliant • Humidity

文件：1.20447 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：E120EE7；Package：PG-TO247-2-STD-NA8.8；The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features • VRRM = 650 V • IF = 120 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for targ

文件：1.30151 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：E12N60；Package：TO-263；12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：E12N60；Package：TO-263；12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes 页数：11 Pages

WXDH

东海半导体