CPDU5V0HE-HF

Marking：E05；Package：SOD-523F；SMD ESD Protection Diode

Features -Bi-directionalESDprotection. -IEC61000-4-5(surge);IPP=8A. -IEC61000-4-2(ESD);±30KV(contact). -Lowclampingvoltage. -Lowleakagecurrent. -Highsurgecurrent.

DMN3012LEG-13

Marking：E04；Package：PowerDI3333-8；30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))andyetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. DC-DCConverters PowerManagementFunctions Featuresand

DMN3012LEG-7

Marking：E04；Package：PowerDI3333-8；30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisnewgenerationMOSFETisdesignedtominimizetheon-state resistance(RDS(ON))andyetmaintainsuperiorswitchingperformance, makingitidealforhighefficiencypowermanagementapplications. DC-DCConverters PowerManagementFunctions Featuresand

DTB143T

Marking：E03；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTD114T

Marking：E04；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTD123T

Marking：E02；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTD163T

Marking：E07；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTDG14GP

Marking：E01；Package：SOT-89；Digital transistor built in resistor and zener diode Driver 60V, 1A

Features 1)HighhFE.(typ.hFE=750VCE/IC=2V/0.5A) 2)Lowsaturationvoltage,VCE(sat)=0.4V(IC/IB=500mA/5mA) 3)Built-inzenerdiodetoprotectthetransistoragainstreversevoltageswhenconnectedtoalowload. Structure NPNdigitaltransistor(withsinglebuiltresistoran

DTDG14GP

Marking：E01；Package：SOT-89；1A / 60V Digital Transistor (with built-in resistor and zener diode)

Features 1)HighhFE.(typ.hFE=750VCE/IC=2V/0.5A) 2)Lowsaturationvoltage,VCE(sat)=0.4V(IC/IB=500mA/5mA) 3)Built-inzenerdiodetoprotectthetransistoragainstreversevoltageswhenconnectedtoalowload. Structure NPNdigitaltransistor(withsinglebuiltresistoran

DTDG23YP

Marking：E02；Package：SOT-89；1A/60V Digital Transistor

DTB114TK Digitaltransistor(built0inresistor) DTDG23YP Digitaltransistor(builtinresistorsandzenerdiode),driver(60V,1A)