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DWL060N06

MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

Dowellsemi

敦为

Dowellsemi

IIPP060N06N

isc N-Channel MOSFET Transistor

文件:337.77 Kbytes 页数:2 Pages

ISC

无锡固电

IPA060N06N

OptiMOSTM Power-Transistor, 60 V

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件:1.66755 Mbytes 页数:10 Pages

INFINEON

英飞凌

IPA060N06N

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件:1.33129 Mbytes 页数:11 Pages

INFINEON

英飞凌

技术参数

  • Type:

    N-CH

  • ESD Diode:

    NO

  • VDS(V):

    60

  • ID(A)25℃:

    5.2

  • VGS(V):

    ±20

  • VTH typ(V)@ID=250μA:

    1.8

  • RDS(on)@10V(mΩ typ):

    40

  • RDS(on)@4.5V(mΩ typ):

    46

  • RDS(on)@3.3V(mΩ typ):

    --

  • RDS(on)@2.5V(mΩ typ):

    --

  • Ciss(pF):

    580

  • Coss(pF):

    36

  • Crss(pF):

    25

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
SOT23-3L
986966
国产
询价
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
询价
更多DWL060N06供应商 更新时间2026-1-27 15:42:00