RF Power MOSFET Transistor 80W, 2-175MHz, 28V

Features • N- channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

文件：145.98 Kbytes 页数：3 Pages

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RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

文件：198.86 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor

文件：145.98 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：609.78 Kbytes 页数：4 Pages

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1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V

·N-Channel Enhancement Mode Device\n·Lower Noise Figure than Bipolar Devices\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

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