RF Power MOSFET Transistor 120W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

文件：145.26 Kbytes 页数：3 Pages

MA-COM

RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices

文件：183.2 Kbytes 页数：3 Pages

MACOM

RF MOSFET POWER TRANSISTOR 120W 28V 2-175 MHZ

[MACOM] Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

文件：197.8 Kbytes 页数：3 Pages

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RF Power MOSFET Transistor 120W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

文件：186.88 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：145.26 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：609 Kbytes 页数：4 Pages

MA-COM

RF Power MOSFET Transistor

文件：186.88 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：691.05 Kbytes 页数：4 Pages

MA-COM

RF Power MOSFET Transistor 120W, 2-175MHz, 28V

·N-Channel enhancement mode device\n·Lower noise figure than bipolar devices\n·High saturated output power\n·Lower capacitances for broadband operation\n·DMOS structure;

MACOM

RF Power MOSFET Transistor 120W, 2-175MHz, 28V

·N-Channel Enhancement Mode Device\n·Lower Noise Figure than Bipolar Devices\n·High Saturate Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS structure;

MACOM