RF Power MOSFET Transistor 15W, 2-175MHz, 12V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications

文件：166.3 Kbytes 页数：3 Pages

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RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices • Specifically Designed for 12 Volt Applications

文件：202.97 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor

文件：166.3 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor 15W, 2-175MHz, 12V

·N-Channel enhancement mode device\n·Specifically designed for 12 volt applications\n·Lower noise figure than bipolar devices\n·High saturated output power\n·Lower capacitances for broadband operation\n·DMOS structure;

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