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DTL1N60

Power MOSFET Available in Tape and Reel

DINTEK

DinTek Semiconductor Co,.Ltd

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance

ETCList of Unclassifed Manufacturers

未分类制造商

1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi

LittelfuseLittelfuse Inc.

力特力特公司

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

未分类制造商

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N60

600VN-ChannelMOSFET

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

1N60

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRONWEITRON

威堂電子科技

1N60

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

1N60

SMALLSIGNALSCHOTTKYDIODE

FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio

DIOTECH

Diotech Company.

1N60

1.2Amps,600/650VoltsN-CHANNELMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

1N60

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&

MCCMicro Commercial Components

美微科美微科半导体公司

1N60

Lowforwardvoltagedrop-lowpowerconsumption

FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N60

45VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60

SMALLSIGNALSCHOTTKYDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60

N-CHANNELMOSFET

DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

供应商型号品牌批号封装库存备注价格
DIN-TEK
21+ROHS
TO251
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Herotek
23+
NA
5556
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
Herotek
23+
模块
400
询价
ROHM
246
询价
MURATA
23+
null
9406
专注配单,只做原装进口现货
询价
MURATA
23+
null
9406
专注配单,只做原装进口现货
询价
Essentra
22+
NA
168
加我QQ或微信咨询更多详细信息,
询价
23+
N/A
12850
正品授权货源可靠
询价
DIN-TEK
TO-251
22+
6000
十年配单,只做原装
询价
Murata
23+
原厂封装
7505
进口原装现货
询价
更多DTL1N60供应商 更新时间2024-4-29 15:20:00