1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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Compatible with Other 1-Wire Devices Purchased Separately

文件：1.16113 Mbytes 页数：9 Pages

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1024位1-Wire EEPROM

DS28E07是一款1024位1-Wire® EEPROM芯片，由四页存储区组成，每页256位。数据先被写入一个8字节暂存器中，经校验后复制到EEPROM存储器。该器件的特点是，四页存储区相互独立，可以单独进行写保护或进入EPROM仿真模式，在该模式下，所有位的状态只能从1变成0。每片器件都拥有唯一的64位ROM识别码(ROM ID)，由工厂写至芯片。通信符合1-Wire协议，在多器件的1-Wire网络中，ROM ID作为节点地址。\n\n • 存储器划分，用户数据编程较灵活\n• 1024位EEPROM存储器，分成四页，每页256位\n• 独立的存储区页，可以被永久写保护或进入EPROM仿真模式(“写入0”)\n\n \n• 先进的1-Wire协议，最大程度将接口简化为单个IO，减少要求的引脚数量、提高灵活性\n• 唯一的工厂编程、不可更改的64位识别码\n• 切换点滞回与滤波可以在噪声下获得最佳性能\n• 通过1-Wire协议以15.4kbps或125kbps单数字信号与主机通信\n• -40°C至+85°C，3.0V至5.25V的宽电压范围读、写操作\n• IO引脚具有±8kV HBM ESD保护(典型值);

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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亚德诺

1024-Bit, 1-Wire EEPROM

General Description The DS28E07 is a 1024-bit, 1-Wire® EEPROM chip organized as four memory pages of 256 bits each. Data is written to an 8-byte scratchpad, verified, and then copied to the EEPROM memory. As a special feature, the four user memory pages can individually be write protected or

文件：1.01541 Mbytes 页数：23 Pages

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