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型号	下载订购	功能描述	制造商上传企业	LOGO
DS1345ABB-70-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABC-100	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABC-100-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABC-70	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABC-70-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABD-100	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABD-100-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABD-70	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABD-70-IND	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim
DS1345ABE-100	文件：220.01 Kbytes Page：12 Pages	1024k Nonvolatile SRAM with Battery Monitor DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the li 文件：220.01 Kbytes 页数：12 Pages	Maxim 美信	Maxim

技术参数

Memory Type：
NV SRAM
Memory Size：
128K x 8
Bus Type：
Parallel
VSUPPLY(V)：
5.25
Package/Pins：
PCAP/34/
BudgetaryPrice：
$16.66 @1k

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	DS1345ABP-70	DALLAS	24+	34pwrcap	217		询价
深圳市星佑电子有限公司	DS1345ABP-70	DALLAS	05+	34/pwrcap	210	自己公司全新库存绝对有货	询价
深圳市粤科源兴科技有限公司	DS1345ABP-70IND+	MAXIM	13+	PWRCP	3758	原装分销	询价
深圳市福田区绿盛电子商行	DS1345ABP-70	DALLAS	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
齐创科技(上海,北京,青岛)有限公司	DS1345ABP-70	DALLAS	23+	SOP8	5000	原装正品,假一罚十	询价
上海专毅电子科技有限公司	DS1345ABP-70	DALLAS	17+	PCB	9800	只做全新进口原装,现货库存	询价
上海鑫科润电子科技有限公司	DS1345ABP-70	DALLAS	02+	34/pwrcap	217	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	DS1345ABP-70	DALLAS	25+	34-PCM	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
上海金庆电子技术有限公司	DS1345ABP-100	DALLAS	新		11	全新原装货期两周	询价
深圳市振宏微科技有限公司	DS1345ABP-70IND+	MAXIM	23+	PWRCP	8888	专做原装正品,假一罚百!	询价

更多DS1345AB供应商更新时间2025-10-4 16:30:00

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