FDB8880

N-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowrDS(ON)andfastswitchingspeed. Features ■rDS(ON)

FDB8880

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=54A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDD8880

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=58A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

FDD8880

N-Channel30-V(D-S)MOSFET

FDD8880

N-ChannelPowerTrench짰MOSFET30V,58A,9m廓

FDD8880

N-ChannelPowerTrenchMOSFET

FDD8880

30VN-ChannelMOSFET

Features Highperformancetrenchtechnologyforextremelylow RDS(ON) Lowgatecharge Highpowerandcurrenthandlingcapability VDS=30V RDS(ON)(atVGS=10V)

FDD8880

N-channelEnhancementModePowerMOSFET

Features VDS=30V,ID=80A RDS(ON)

FDMS8880

N-ChannelPowerTrench짰MOSFET30V,21A,8.5m廓

FDP8880

iscN-ChannelMOSFETTransistor