DRV835x 100-V Three-Phase Smart Gate Driver

1 Features 1• 9 to 100-V, Triple half-bridge gate driver – Optional integrated buck regulator – Optional triple low-side current shunt amplifiers • Smart gate drive architecture – Adjustable slew rate control for EMI performance – VGS handshake and minimum dead-time insertion to prevent sh

文件：4.72465 Mbytes 页数：101 Pages

TI

德州仪器

100-V Three-Phase Smart Gate Driver

文件：3.77637 Mbytes 页数：90 Pages

TI

德州仪器

100-V Three-Phase Smart Gate Driver

文件：3.77743 Mbytes 页数：91 Pages

TI

德州仪器

100-V Three-Phase Smart Gate Driver

文件：2.75807 Mbytes 页数：87 Pages

TI

德州仪器

102V（最大值）三相智能栅极驱动器

DRV835x 系列器件均为高度集成的栅极驱动器，适用于三相无刷直流 (BLDC) 电机 应用标准。这些 应用 包括 BLDC 电机的场定向控制 (FOC)、正弦电流控制和梯形电流控制。该器件型号提供了可选的集成式分流放大器以支持不同的电机控制方案，还提供了降压稳压器，以为栅极驱动器或外部控制器供电。\n\nDRV835x 通过采用智能栅极驱动 (SGD) 架构减少了 MOSFET 压摆率控制和保护电路通常所需要的外部组件数量。SGD 架构还可优化死区时间以防止击穿问题，在通过 MOSFET 压摆率控制技术降低电磁干扰 (EMI) 方面带来了灵活性，并可通过 VGS 监控器防止栅极短路问题。强 • 9V 至 100V 三半桥栅极驱动器 \n• 可选的集成降压稳压器 \n• 可选的三个低侧电流分流放大器\n \n• 智能栅极驱动架构 \n• 可调转换率控制，可实现优异的 EMI 性能\n• VGS 握手和最小死区时间插入，可避免发生击穿\n• 50mA 至 1A 峰值拉电流 \n• 100mA 至 2A 峰值灌电流\n• 通过强下拉能力减小 dV/dt\n \n• 集成栅极驱动器电源 \n• 高侧倍增电荷泵可实现 100% PWM 占空比控制\n• 低侧线性稳压器\n \n• 集成 LM5008A 降压稳压器 \n• 6V 至 95V 工作电压范围\n• 2.5V 至 75V、;

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

文件：3.46942 Mbytes 页数：83 Pages

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

文件：3.46942 Mbytes 页数：83 Pages

TI

德州仪器

丝印：8350FH；Package：WQFN(RTV)；DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

文件：3.46942 Mbytes 页数：83 Pages

TI

德州仪器

丝印：8350FH；Package：WQFN(RTV)；DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

文件：3.46942 Mbytes 页数：83 Pages

TI

德州仪器

DRV835xF 100-V Three-Phase Smart Gate Driver

1 Features • 9 to 100-V, Triple half-bridge gate driver – Optional triple low-side current shunt amplifiers • Functional Safety Quality-Managed – Documentation available to aid IEC 61800-5-2 functional safety system design • Smart gate drive architecture – Adjustable slew rate control for E

文件：3.46942 Mbytes 页数：83 Pages

TI

德州仪器