DRV8329-Q1 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.2972 Mbytes 页数：57 Pages

TI

德州仪器

DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 页数：58 Pages

TI

德州仪器

DRV8329 4.5 to 60 V Three-phase BLDC Gate Driver

1 Features • 65-V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60-V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000-mA Maximum Peak Source Curr

文件：3.27981 Mbytes 页数：61 Pages

TI

德州仪器

具有单个电流检测放大器的汽车级 60V 三相栅极驱动器

The DRV8329-Q1 family of devices is an integrated gate driver for three-phase applications. The devices provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The device generates the correct gate drive voltages using an internal charge pump a • 65-V Three Phase Half-Bridge Gate Driver \n• Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)\n• 4.5 to 60-V Operating Voltage Range\n• Supports 100% PWM Duty Cycle with Trickle Charge pump\n \n• Bootstrap based Gate Driver Architecture \n• 1000-mA Maximum Peak Source Current\n• 2000;

TI

德州仪器

DRV8329-Q1 4.5 to 60V Three-phase BLDC Gate Driver

1 Features • 65V Three Phase Half-Bridge Gate Driver – Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS) – 4.5 to 60V Operating Voltage Range – Supports 100% PWM Duty Cycle with Trickle Charge pump • Bootstrap based Gate Driver Architecture – 1000mA Maximum Peak Source Current

文件：3.28689 Mbytes 页数：58 Pages

TI

德州仪器