DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件：1.60667 Mbytes 页数：43 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件：1.65841 Mbytes 页数：45 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.00266 Mbytes 页数：50 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.18173 Mbytes 页数：52 Pages

TI

德州仪器

具有单个电流检测放大器的最大 105V 单通道半桥智能栅极驱动器

The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture sup Drives two N-channel MOSFETs in half-bridge configuration \n \nHigh-side MOSFET source/drain up to 102V (absolute max)\n \n8V (5V DRV8162L) to 20V gate drive power supply\n \nIntegrated bootstrap diode\n \n\n \n16-level gate drive peak current \n \n16mA - 1000mA source current\n \n32mA - 2000mA sink;

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • 16-level gate drive peak current – 16mA - 1000mA source current – 32mA - 2000m

文件：1.65841 Mbytes 页数：45 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.00266 Mbytes 页数：50 Pages

TI

德州仪器

DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.18173 Mbytes 页数：52 Pages

TI

德州仪器

丝印：8161；Package：VSSOP；DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.18173 Mbytes 页数：52 Pages

TI

德州仪器

丝印：8161；Package：VSSOP；DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.00266 Mbytes 页数：50 Pages

TI

德州仪器