丝印：DPAK；TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● High Transition Frequency

文件：305.06 Kbytes 页数：2 Pages

FS

丝印：DPAK；Package：T0-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤399mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.67 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.42 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤64mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.33 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.65Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.97 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.34 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • High Frequency Synchronous Buck Converters For Computer Processor Power • FEATURES • Static drain-source on-resistance: RDS(on)≤11mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.39 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.21 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.44 Kbytes 页数：2 Pages

ISC

无锡固电