60V N-Channel MOSFET

General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a

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AOSMD

万国半导体

60V N-Channel MOSFET

文件：267.48 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 60 V (D-S) MOSFET

文件：992.05 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced SGT technology

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DOINGTER

杜因特

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

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ISC

无锡固电

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

MOSFET

MTW

美台微

60V N-Channel MOSFET

General Description • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Compliant

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UMW

友台半导体

60V N-Channel MOSFET

General Description • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Compliant Product Summary VDS 60V ID (at VGS=10V) 46A RDS(ON) (at VGS=10V)

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EVVOSEMI

翊欧

60V N-Channel MOSFET

文件：267.48 Kbytes 页数：6 Pages

AOSMD

万国半导体