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DMT67M8LCGQ数据手册Diodes中文资料规格书
DMT67M8LCGQ规格书详情
描述 Description
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
特性 Features
•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application
•High Conversion Efficiency
•Low RDS(ON) – Minimizes On State Losses
•Low Input Capacitance
•Fast Switching Speed
•ESD Protected Gate
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
•The DMT67M8LCGQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.
应用 Application
• Synchronous Rectifier
• Power Management Functions
• DC-DC Converters
技术参数
- 制造商编号
：DMT67M8LCGQ
- 生产厂家
：Diodes
- Automotive Compliant PPAP
：Yes
- Polarity
：N
- ESD Diodes
：Yes
- VDS
：60 V
- VGS
：20 ±V
- IDS @ TA = +25°C
：16 A
- PD @ TA = +25°C
：2.2 W
- RDS(ON) Max @ VGS (10V)
：5.7 mΩ
- RDS(ON) Max @ VGS (4.5V)
：8.1 mΩ
- RDS(ON) Max @ VGS (2.5V)
：N/A mΩ
- RDS(ON) Max @ VGS (1.8V)
：N/A mΩ
- VGS (th) Max
：2.5 V
- QG Typ @ VGS = 4.5V (nC)
：20 nC
- QG Typ @ VGS = 10V (nC)
：37.5 nC
- Packages
：V-DFN3333-8 (Type B)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
TY/台灣半導体 |
23+ |
DFN3*3-8L |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
24+ |
N/A |
63000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
DIODES/美台 |
25+ |
DFN3333-8 |
20300 |
DIODES/美台原装特价DMT67M8LCGQ即刻询购立享优惠#长期有货 |
询价 | ||
DIODES/美台 |
23+ |
NA |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
DIODESINC |
21+ |
NA |
2000 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
Diodes Incorporated |
2022+ |
8-PowerTDFN |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
DIODES(美台) |
24+ |
PowerDI50608 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Diodes(美台) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
TY/台灣半導体 |
23+ |
DFN3*3-8L |
6000 |
专注配单,只做原装进口现货 |
询价 |
