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DMT67M8LCG数据手册Diodes中文资料规格书
DMT67M8LCG规格书详情
描述 Description
This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.
特性 Features
•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application
•High Conversion Efficiency
•Low RDS(ON) – Minimizes On State Losses
•Low Input Capacitance
•Fast Switching Speed
•ESD Protected Gate
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
应用 Application
• Synchronous Rectifier
• Power Management Functions
• DC-DC Converters
技术参数
- 制造商编号
：DMT67M8LCG
- 生产厂家
：Diodes
- Automotive Compliant PPAP
：DMT67M8LCGQ
- Polarity
：N
- ESD Diodes
：Yes Y/N
- VDS
：60 V
- VGS
：20 ±V
- IDS @ TA = +25°C
：16 A
- IDS @ TC = +25°C
：64.6 A
- PD @ TA = +25°C
：2.2 W
- PD @ TC = +25°C
：N/A W
- RDS(ON) Max @ VGS (10V)
：5.7 mΩ
- RDS(ON) Max @ VGS (4.5V)
：8.1 mΩ
- RDS(ON) Max @ VGS (2.5V)
：N/A mΩ
- RDS(ON) Max @ VGS (1.8V)
：N/A mΩ
- VGS (th) Max
：2.5 V
- CISS Typ
：2130 pF
- CISS Condition [@VDS]
：30 V
- QG Typ @ VGS = 4.5V (nC)
：20 nC
- QG Typ @ VGS = 10V (nC)
：37.5
- Packages
：V-DFN3333-8 (Type B)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TY/台灣半導体 |
23+ |
DFN3*3-8L |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
DIODES/美台 |
23+ |
NA |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
DIODESINC |
21+ |
NA |
2000 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
Diodes Incorporated |
2022+ |
8-PowerTDFN |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
DIODES(美台) |
24+ |
PowerDI50608 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Diodes(美台) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
TY/台灣半導体 |
23+ |
DFN3*3-8L |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
DIODES/美台 |
20+ |
V-DFN3333-8 |
120000 |
只做原装 可免费提供样品 |
询价 | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
询价 |
