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DMN32D2LFB4-7中文资料美台半导体数据手册PDF规格书
DMN32D2LFB4-7规格书详情
描述 Description
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
特性 Features
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.2V Max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
产品属性
- 型号：
DMN32D2LFB4-7
- 功能描述：
MOSFET 350mW 30Vdss
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
DIODES |
24+ |
DFN1006 |
5000 |
十年沉淀唯有原装 |
询价 | ||
DIODES |
23+ |
DFN1006 |
20000 |
询价 | |||
DIODES |
21+ |
12588 |
原装正品,自己库存 假一罚十 |
询价 | |||
DIODES/美台 |
25+ |
QFN |
160140 |
明嘉莱只做原装正品现货 |
询价 | ||
DIODES/美台 |
22+ |
DFN1006 |
3000 |
原装正品 |
询价 | ||
DIODES |
23+ |
DFN |
999999 |
原装正品现货量大可订货 |
询价 | ||
DIODES/美台 |
21+ |
X2-DFN1006-3 |
8080 |
只做原装,质量保证 |
询价 | ||
DIODES |
24+ |
DFN1006 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
DIODES/美台 |
23+ |
X1-DFN1006-3 |
12730 |
原装正品代理渠道价格优势 |
询价 |
