DMJ2836

DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips; • Low 1/f noise \n• Low intermodulation distortion \n• Epoxy and hermetically sealed packages \n• SPC controlled wafer fabrication;

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions.\n\nBeam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.\n\nA variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches.\n\nBeam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.\n\nDMJ2836 Series includes DMJ2836-223.

DMJ2836

Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

DMJ2836-000

Beam-Lead Common Cathode; • Low 1/f noise \n• Low intermodulation distortion \n• Epoxy and hermetically sealed packages \n• SPC controlled wafer fabrication\n;

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches. Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.

DMJ2836-223

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features Low1/fnoise Lowintermodulationdistortion Hermeticallysealedpackages Statisticalprocesscontrolwaferfabrication PackagesratedMSL1,260CperJEDECJ-STD-020)

EDS2836

SwitchingDiode

FMMD2836

SWITCHINGCOMMONANODEDIODEPAIR

SOT23SILICONPLANARHIGHSPEED SWITCHINGCOMMONANODEDIODEPAIR PARTMARKINGDETAIL-A2

HF2836

CommonModeChokeCoilsLineFiltersForpowerline,Closedmagneticcircuitcoretype

HM2836D

High-precisionnon-isolatedstep-downLEDconstantcurrentdriverchip

HSB2836

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

HSM2836C

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching