DMJ2304

Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

DMJ2304-221

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features Low1/fnoise Lowintermodulationdistortion Hermeticallysealedpackages Statisticalprocesscontrolwaferfabrication PackagesratedMSL1,260CperJEDECJ-STD-020)

DMJ2304-251

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features Low1/fnoise Lowintermodulationdistortion Hermeticallysealedpackages Statisticalprocesscontrolwaferfabrication PackagesratedMSL1,260CperJEDECJ-STD-020)

ECWF2304MB

MetallizedPolypropyleneFilmCapacitor

ENA2304

8-bit1-chipMicrocontroller

FM2304DS

N-ChannelEnhancementModeFieldEffectTransistor

FMB-2304

SchottkyBarrierDiodes

Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent)

FTK2304

TheFTK2304usesadvancedtrenchtechnologyto

G2304

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheG2304providesthedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. Features •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged Applications •PowerManagementinNotebookComputer •PortableEquipmen

G2304

N-CHANNELENHANCEMENTMODEPOWERMOSFET