DMJ2210

Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

DMJ2210-223

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features Low1/fnoise Lowintermodulationdistortion Hermeticallysealedpackages Statisticalprocesscontrolwaferfabrication PackagesratedMSL1,260CperJEDECJ-STD-020)

DMJ2210-253

Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages

Features Low1/fnoise Lowintermodulationdistortion Hermeticallysealedpackages Statisticalprocesscontrolwaferfabrication PackagesratedMSL1,260CperJEDECJ-STD-020)

DP2210

120...195WattDC-DCConverters

120...195WattDC-DCConverters Inputvoltageupto150VDC1to4isolatedoutputs3.3...96VDC4242VDCI/Oelectricstrengthtestvoltage •Extremelyslimcase(4TE),fullyenclosed •Extremelylowinrushcurrent,hotswappable •Operatingambienttemperaturerange –40..

DP2210

IntegratedCircuitSolid-StateRelay

DSC2210

Low-JitterI2C/SPIProgrammableCMOSOscillator

DTQ2210

N-Channel20V(D-S)MOSFET

FEATURES •DT-TrenchPowerMOSFET •ESDProtected:4000V •CommonDrain APPLICATIONS •1-2CellBatteryProtectionCircuitry

DVCNP2210-LF

ELECTROLYTICNONPOLARISED

DVCR2210-LF

ELECTROLYTIC-85째C

DVJL2210-LF

SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL