首页 >DMG6968UDMDI>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: Applications Powermanagementfunctions DC-DCconverters Motorcontrols Features LowOn-Resistance Lo | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage MechanicalData •Case:TSSOP-8 •CaseMaterial:MoldedPlastic,“Green”MoldingCompound.ULFlammabilityClassificationRating94V-0 •MoistureSensitivity:Level1perJ-STD-020 •Ter | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Common-DrainDualN-ChannelMOSFET Features •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforLi-ionbatterypacksuse •Designedforbattery-switchapplications | GE GE Industrial Company | GE | ||
N-ChannelEnhancement-ModeMOSFETDie Features •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •FastSwitching •HightemperaturesolderinginaccordancewithCECC802/Reflowguaranteed •LogicLevel •IdealforLiionbatterypackapplications | GE GE Industrial Company | GE | ||
DualN-ChannelEnhancement-ModeMOSFET(20V,6.5A)(BatterySwitch,ESDProtected) Features •RDS(on)=32mΩ@VGS=2.5V,ID=5.5A •RDS(on)=24mΩ@VGS=4.5V,ID=6.5A •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforLiionBatteryPacksUse •DesignedforBatterySwitchAppliactions •ESDProtected | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
DualN-ChannelEnhancement-ModeMOSFET(20V,6.5A)BatterySwitch,ESDProtected) Features •RDS(on) | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
DualN-ChannelEnhancement-ModeMOSFET(20V,6.5A)(BatterySwitch,ESDProtected) Features •RDS(on)=32mΩ@VGS=2.5V,ID=5.5A •RDS(on)=24mΩ@VGS=4.5V,ID=6.5A •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforLiionBatteryPacksUse •DesignedforBatterySwitchAppliactions •ESDProtected | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC | ||
DualN-Channel2.5-V(G-S)MOSFETCommonDrain,ESDProtection | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
16-Port,36VConstant-CurrentLEDDriver GeneralDescription TheMAX6971serial-interfacedLEDdriverprovides16open-drain,constant-current-sinkingLEDdriveroutputsratedat36V.TheMAX6971operatesfroma3Vto5.5Vsupply.TheMAX6971supplyandtheLEDs’supplyorsuppliescanpowerupinanyorder.Theconstant-currentoutputs | MaximMaxim Integrated Products 美信美信半导体 | Maxim | ||
PowerMOSFET6.6Amps,20Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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