RF Power MOSFET

RF Power MOSFET ♦ N-Channel Enhancement Mode ♦ Low Qg and Rg ♦ High dv/dt ♦ Nanosecond Switching ♦ 30MHz Maximum Frequency Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS

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IXYS

艾赛斯

RF Power MOSFET

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IXYS

艾赛斯

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特

SMD

TDK

东电化

上传：深圳市英博尔电子有限公司

QFP-240

TDK

东电化

上传：深圳市宏博芯电子有限公司