RF Power MOSFET

N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advance

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IXYS

艾赛斯

RF Power MOSFET

N-Channel Enhancement Mode Low Qgand Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability •

文件：142.82 Kbytes 页数：5 Pages

IXYS

艾赛斯

RF Power MOSFET

VDSS = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased

文件：76.83 Kbytes 页数：3 Pages

IXYS

艾赛斯

RF Power MOSFET

VDSS = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased

文件：76.83 Kbytes 页数：3 Pages

IXYS

艾赛斯

RF Power MOSFET

VDSS = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased

文件：162.7 Kbytes 页数：5 Pages

IXYS

艾赛斯

RF Power MOSFET

[Directed-Energy] The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. ♦ Common Source Push-Pull Pair ♦ N-Channel Enhancement Mode

文件：89.23 Kbytes 页数：3 Pages

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RF Power MOSFET

The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz. ♦ Common Source Push-Pull Pair ♦ N-Channel Enhancement Mode ♦ Low Qg and Rg

文件：147.19 Kbytes 页数：4 Pages

IXYS

艾赛斯

RF Power MOSFET

Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced low Qg process • Low gate charge and capacitances − easier to drive − faster switching • Low RDS(on) • Ver

文件：78.91 Kbytes 页数：3 Pages

IXYS

艾赛斯

RF Power MOSFET

The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or paral lel operation in RF generators and amplifiers at frequencies to >65 MHz. ♦ Common Source Push-Pull Pair ♦ N-Channel Enhancement Mode ♦ Low Qg and Rg

文件：175.97 Kbytes 页数：4 Pages

IXYS

艾赛斯

RF Power MOSFET

Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced low Qg process • Low gate charge and capacitances − easier to drive − faster switching • Low RDS(on) • Ver

文件：78.91 Kbytes 页数：3 Pages

IXYS

艾赛斯