RF Power MOSFET

N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced low Qg process • Low gate charge and capa

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IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET

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Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特

Package：6-SMD，扁平引线裸焊盘；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET N-CHANNEL DE150

IXYS-RF