Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series • Both P-type and N-type low barrier silicon available \n• Bonded junctions for reliability \n• See also zero bias silicon schottky barrier detector diodes;

Skyworks

思佳讯

Beam-Lead P-Type Detector

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series • Both P-type and N-type low barrier silicon available \n• Low 1/f noise \n• Bonded junctions for reliability \n• Planar passivated beam-lead and chip construction \n• See also zero bias silicon schottky barrier detector diodes;

Skyworks

思佳讯

Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches

文件：165.22 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

200 ?? Low Leakage, Low Parasitic and Low Charge Injection, Quad SPST Analog Switches

FEATURES • 1.8 V to 5.5 V single supply operation • Low leakage, 1 nA / max. at 85 °C • Low switch off capacitance • Rail-to-rail signal handling • Latch up current > 800 mA (JESD78) • ESD: 8000 V/HBM • Typical power consumption (

文件：201.21 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Low Cost Linear Storage Chokes

文件：116.98 Kbytes 页数：2 Pages

TALEMA