Intel짰 Next Unit of Computing Kit

文件：880.3 Kbytes 页数：4 Pages

INTEL

英特尔

丝印：DCCV；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件：550.51 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：DCCA；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件：550.51 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：DCCH；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件：550.51 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：DCCG；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件：550.51 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：DCCC；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9014 is a high performance dual LDO capable of sourcing 300mA current from both outputs. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. Features • Integrates two hi

文件：550.51 Kbytes 页数：11 Pages

RENESAS

瑞萨

Silicon Epitaxial Planar Type (Series Connection) Ultrahigh-Speed Switching Diode

ONSEMI

安森美半导体

DIODE ARRAY GP 80V 100MA 3CP

ONSEMI

安森美半导体

直线位移传感器

RDP

包装：散装 类别：工具 插拔工具 描述：TOOL EXTRACT

LEMO

雷莫