DB4

SILICON BIDIRECTIONAL DIAC

Features •Lowreverseleakage •Highforwardsurgecapability •Hightemperaturesolderingguaranteed:260℃/10seconds,0.375(9.5mm)leadlength,5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard

DB4

SILICON BIDIRECTIONAL DIAC

Features •Thethreelayer,twoterminal,axiallead,hermeticallysealed diacsaredesignedspecificallyfortriggeringthyristors. •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation) •MoistureSensitivity:Level1perJ-STD-020C •The

DB4

Silicon Bidirectional Diacs

Features ◇Thethreelayer,twotermnal,axiallead,hermeticallysealeddiacsaredesignedspecificallyfortriggeringthyristors.Theydemonstratelowbreakovercurrentatbreakovervoltageastheywithstandpeakpulsecurrent,Thebreakoversymmetryiswithinthreevolts(DB3,DB4).Thesediacsarei

DB4

Bidirectional Si-Trigger-Diodes (DIAC)

Features BidirectionalswitchingDB31/32:MoretightVBOrangeProtectedagainstfaulttriggeringbylightComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications TriggeringofTriacsandThyristorsACswitchesandcontrolsDimmercircuitsCommercialgrade1) MechanicalDat

DB4

Silicon Bidirectional Diacs

Features ◇Thethreelayer,twotermnal,axiallead,hermetically1sealeddiacsaredesignedspecificallyfortriggering1thyristors.Theydemonstratelowbreakovercurrentat1breakovervoltageastheywithstandpeakpulse1current,Thebreakoversymmetryiswithinthree1volts(DB3,DB4).Thesediacs

DB4

Silicon Bidirectional Trigger Diodes

SiliconBidirectionalTriggerDiodes Thesediacsareintendedforuseinthyristorphasecontrol, circuitsforlamp-dimming,universal-motorspeedcontrols,and heatcontrols.

DB4

BIDIRECTIONAL TRIGGER DIODE

Features ●VBO:40V ●Breakovervoltagerange:35to45V Applications Functioningasatriggerdiodewithafixedvoltagereference,theDB4canbeusedinconjunctionwithtriacsforsimplifiedgatecontrolcircuitsorasastartingelementinfluorescentlampballasts.

DB4

SILICON BIDIRECTIONAL DIAC

FEATURES •Thethree-layer,two-terminal,axial-lead,hermeticallysealeddiacsare designedspecificallyfortriggeringthyristors.Theydemonstratelowbreakover currentatbreakovervoltageastheywithstandpeakpulsecurrent.Thebreakover symmetryiswithinthreevolts(DB3,DC34,

DB4

2A Axial Leaded Silicon Bilateral Voltage Triggered

Features •Threewaylayertwoterminal,axiallead, hermeticallysealeddiacsaredesignedspecificallyfor riggeringthyrisitors.Thedemonstratelowbreakovercurrent. Thebreakoversymmetryiswithinthreevolts(DB3,DB4) orfourvolts(DB6).Thesediacsareintendedfor use

DB4

SILICON BIDIRECTIONAL DIAC

FEATURES Thethreelayer,twoterminal,axiallead,hermeticallysealeddiacsare designedspecificallyfortriggeringthyristors.Theydemonstratelowbreakover currentatbreakovervoltageastheywithstandpeakpulsecurrent,Thebreakover symmetryiswithinthreevolts(DB3,DC34,D