丝印：D9N；Package：DSBGA；SN74LVC1G29 2-of-3 Decoder/Demultiplexer

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Max tpd of 5.1 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical V OLP (Output G

文件：683.94 Kbytes 页数：21 Pages

TI

德州仪器

丝印：D9N；Package：DSBGA；SN74LVC1G29 2-of-3 Decoder/Demultiplexer

1FEATURES 2• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Max tpd of 5.1 ns at 3.3 V • Low Power Consumption, 10-μA Max I CC • ±24-mA Output Drive at 3.3 V • Typical V OLP (Output G

文件：683.94 Kbytes 页数：21 Pages

TI

德州仪器

丝印：D9N10A；Package：TO-252AA；100V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@4.5A

文件：457.27 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D9N10；Package：IPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件：278.05 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：D9N10；Package：DPAK；N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

文件：278.05 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：D9NM60；Package：IPAK；N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh™Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that a

文件：181.51 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：D9NM60；Package：DPAK；N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh™Power MOSFET

TYPICAL RDS(on) = 0.55 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that a

文件：181.51 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

400V,8A N-Channel MOSFET

The AOD9N40 isfabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

APEC

富鼎先进

高压MOSFET

Jingdao

晶导

高压MOSFET

Jingdao

晶导