丝印：D88；Package：SOT-23；Small signal Schottky diodes

Description The BAT54 series uses 40 V Schottky barrier diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. Features ■ Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mo

文件：158.85 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D88；Package：SOT-23；SMALL SIGNAL SCHOTTKY DIODE

Description The BAT54 series uses 40 V Schottky barrier diodes packaged in SOD- 23, SOD-323, SOD-523, SOT-23, SOT-323, or SOT-666. Features ■ Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mo

文件：83.52 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：D88；Package：SOT-23；Small signal Schottky diodes

文件：163.06 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D882；Package：SOT-223；SOT-223 Plastic-Encapsulate Transistors

Features Power Dissipation:1.5W Low Collector-emitter Saturation Voltage

文件：1.17554 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D882H；Package：SOT-89-3L；TRANSISTOR (NPN)

FEATURE Low VCE(sat) Large current capacity

文件：728.77 Kbytes 页数：4 Pages

SY

顺烨电子

丝印：D882H；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURE Low VCE(sat) Large current capacity

文件：1.76221 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D882Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power dissipation

文件：1.67112 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：D882Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Power dissipation

文件：1.67112 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Bipolar Junction Transistor

FEATURES ● Features of good high temperature ● High switching speed APPLICATION Charger、 Emergency lamp and Electric toy control circuit

文件：124.56 Kbytes 页数：3 Pages

JINGDAO

晶导

LOW FREQUENCY POWER AMPLIFIER

LOW FREQUENCY POWER AMPLIFIER ● Complement to B834 ● Collector-Emitter Voltage: VCEO=150V ● Collector Dissipation: PC(max)=30W

文件：90.17 Kbytes 页数：1 Pages

ELITE

爱丽特