NPN MEDIUM POWER TRANSISTOR

Description The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. Features ■ High current ■ Low saturation voltage ■ Complement to 2SB772 Applications ■ Voltage regulation ■ Relay driver ■

文件：92.09 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power Dissipation

文件：397.43 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Power dissipation

文件：541.22 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

NPN TRANSISTOR

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.74 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage. ● Excellent hFE linearity and high hFE. ● Less cramping space required due to small and thin Package and reducing the trouble for attachment to a radiator. APPLICATIONS ● Power amplifier application.

文件：304.45 Kbytes 页数：4 Pages

DSK

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件：481.48 Kbytes 页数：3 Pages

WILLAS

威伦电子

PNP Transistors

Features ● Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A)

文件：642.73 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Power dissipation MARKING:882

文件：187.47 Kbytes 页数：2 Pages

HOTTECH

合科泰

GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS

DESCRIPTION The D882 is available in SOT 89 Package FEATURES  Power dissipation  Availabl e in SOT 89 P ackage

文件：554.52 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.04 Kbytes 页数：1 Pages

TEL