EH7506B

SINGLEPHASEBRIDGEMODULES

SinglePhaseBridgeModules ●InternalTransientSupression ●HighTerminal-to-baseIsolationof2500VACRMS ●Availableto1200V ●MountingBoltsIsolationFromPowerTeminals

ENN7506

Low-FrequencyGeneral-PurposeAmplifierApplications

GXO-7506G

7550PackageUltra-LowJitter1.8VOscillator

GXO-7506J

7550PackageUltra-LowJitter2.5VOscillator

GXO-7506L

7550PackageUltra-LowJitter3.3VOscillator

HM7506

Programmablelinearconstantcurrentcontroller

IRF7506

PowerMOSFET(Vdss=-30V,Rds(on)=0.27ohm)

VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7506

HEXFETPowerMOSFET(VDSS=-30V,RDS(on)=O.27ohm)

VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7506PBF

ULTRALOWONRESISTANCE

IRF7506PBF

HEXFETPowerMOSFET(VDSS=-30V,RDS(on)=O.27ohm)

VDSS=-30V RDS(on)=0.27Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow