Full blocking capability 50/60Hz over a wide temperature range

Key Parameters     VBO / VRRM 5800 V / 6800 V    IFAVM 770 A (TC=100 °C)    IFSM 3570A (T 12500 A C=55°C)    VT0 0,84 V    rT 0,87 mΩ    RthJC 28 K/kW    Clamping Force 10 … 16 kN    Max. Diameter 58,5 mm    Contact Diameter 34 mm    Height 26,4 mm Features • Full blocking capability 5

文件：243.54 Kbytes 页数：9 Pages

Infineon

英飞凌

Netz-Gleichrichterdiode Rectifier Diode

Rectifier Diode

文件：231.33 Kbytes 页数：8 Pages

eupec

SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件：89.83 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose.

文件：88.53 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SB688 APPLICATIONS • Power amplifier applications • Recommend for 45~50W audio frequency amplifier output stage

文件：175.98 Kbytes 页数：4 Pages

SAVANTIC

Standard Recovery Diodes

文件：911.84 Kbytes 页数：5 Pages

NELLSEMI

尼尔半导体

Low power dissipation

文件：1.21841 Mbytes 页数：3 Pages

NELLSEMI

尼尔半导体

Standard Recovery Diodes

文件：911.84 Kbytes 页数：5 Pages

NELLSEMI

尼尔半导体

DUAL IN LINE REED RELAY / 1 normally open contact ( low profile )

文件：61.32 Kbytes 页数：2 Pages

CELDUC

凡纪继电器

DUAL IN LINE REED RELAY / 1 normally open contact ( low profile )

文件：61.32 Kbytes 页数：2 Pages

CELDUC

凡纪继电器