D717

Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

SiliconNPNhighfrequency,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose.

DSK-717

POWERDIVIDERS0쨘:2-WAY

FCX717

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *10APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.12mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)77mΩat3A

FCX717

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features •BVCEO=-12V •IC=-3.0AContinuousCurrent •LowSaturationVoltageVCE(sat)

FCX717

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●10Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.12mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)77mΩat3A.

FCX717TA

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features •BVCEO=-12V •IC=-3.0AContinuousCurrent •LowSaturationVoltageVCE(sat)

FMMT717

SwitchingTransistor

Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat).

FMMT717

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-12V •IC=-2.5AContinuousCollectorCurrent •ICM=-10APeakPulseCurrent •LowSaturationVoltageE.g.-17mVMax@IC=-100mA. •RCE(sat)=72mΩat2.5Aforalowequivalenton-resistance •625mWpowerdissipation •hFEcharacterisedupto-10Aforhighcurrentgai

FMMT717

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)

FMMT717

PNPTransistor

Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT617