Silicon-Twin-Rectifiers

文件：88.64 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

丝印：D60516；Package：DSBGA(YBH)；DAC60516W 16-Channel, 12-Bit, Voltage-Output DAC With Internal Reference

1 Features • Performance: – INL: ±1LSB maximum at 12-bit resolution – TUE: ±0.15% of FSR maximum • Integrated 2.5V precision internal reference – Initial accuracy: ±5mV maximum – Drift: 25ppm/°C typical; 40ppm/°C maximum • High drive capability: 50mA with 0.5V from supply rails • Flex

文件：1.70169 Mbytes 页数：58 Pages

TI

德州仪器

丝印：D60N04；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：520.74 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D60N04；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：548.85 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D60N04S；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：650.48 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D60N04V；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：646.69 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D60N08；Package：TO-252AA；80V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：333.37 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：D60P04E；Package：TO-252AA；40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-20A

文件：437.5 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：D60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

文件：847.29 Kbytes 页数：6 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

丝印：D60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

文件：662.18 Kbytes 页数：6 Pages

KERSEMI