型号：SN74LVC2G132YZPR；Package：DSBGA；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 页数：20 Pages

TI1

德州仪器

型号：STD5NK50Z-1；Package：TO-251；N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：618.93 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

型号：STD5NK50Z-1；Package：TO-251；N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：447.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

型号：STD5NK50ZT4；Package：DPAK；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelect

文件：674.1 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

型号：STD5NM60-1；Package：IPAK；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件：558.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

型号：STD5NM60T4；Package：DPAK；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

文件：558.91 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

型号：D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.32922 Mbytes 页数：13 Pages

WXDH

东海半导体

型号：D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.32901 Mbytes 页数：13 Pages

WXDH

东海半导体

型号：D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.32871 Mbytes 页数：13 Pages

WXDH

东海半导体

型号：D5NE60C；Package：TO-252；4.5A 600V N-channel Enhancement Mode Power MOSFET

文件：1.3336 Mbytes 页数：13 Pages

WXDH

东海半导体