OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Simple bias cicuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：31.32 Kbytes 页数：2 Pages

SEME-LAB

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

文件：197.96 Kbytes 页数：20 Pages

TI

德州仪器

DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor

1 Features 1• Industry-Leading Low-Power Consumption • Pin-Selectable Sampling Rate: – SEL = Low: 20 Hz Using 1.3 μA (1.8 V) – SEL = High: 2.5 kHz Using 142 μA (1.8 V) • 1.65- to 5.5-V Operating VCC Range • High Magnetic Sensitivity: ±2 mT (Typical) • Robust Hysteresis: 4 mT (Typical) • Pu

文件：957.54 Kbytes 页数：25 Pages

TI

德州仪器

Ultra-Low-Power Digital-Latch Hall-Effect Sensor

文件：197.96 Kbytes 页数：20 Pages

TI

德州仪器