Miniature Snap-in Power Rocker Switches

Features/Benefits • Momentary and maintained models • PC and quick connect terminals • Recessed bracket available — prevents accidental actuation • RoHS compliant • Gold plated options available

文件：482.55 Kbytes 页数：5 Pages

CK-COMPONENTS

力特

DC/DC升压转换器

D501 DC/DC 芯片是采用CMOS 工艺制造的静态电流极低的VFM 开关型直流/直流升压转换器,该芯片由振荡器,VFM 控制电路,LX 开关驱动晶体管,基准电压,单元误差比较放大器,电压采样电阻,LX 开关保护电路等部分组成.D501 DC/DC 升压转换器具有低纹波高效率等特点,外围只需接三个元件。 \n D501采用SOT-23-3L的封装形式封装。 ·只需少量的外接元件\n·极低的输入电流\n·输出电压高精度2.5% \n·低纹波及低噪声\n·启动电压低\n·高效率,典型值为80%\n·封装体积小;

Silicore

芯谷科技

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY

2SD5017 -> Correct Partnumber : 3DD5017 3DD5017 is high breakdown voltage of NPNbipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

文件：151.16 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions

文件：102.3 Kbytes 页数：2 Pages

ISC

无锡固电

NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

* NPN Triple Diffused Planar Silicon Transistor * High Collector-Base Voltage Vcbo = 1500V

文件：172.66 Kbytes 页数：5 Pages

Samsung

三星

I.S. SIL3 2-Wire HART짰 Transmitter Power Supply

文件：278.79 Kbytes 页数：1 Pages

GMI

I.S. SIL3 2-Wire HART짰 Transmitter Power Supply

文件：278.79 Kbytes 页数：1 Pages

GMI

I.S. SIL3 2-Wire HART짰 Transmitter Power Supply

文件：278.79 Kbytes 页数：1 Pages

GMI

METAL GATE RF SILICON FET

文件：251.49 Kbytes 页数：6 Pages

SEME-LAB

METAL GATE RF SILICON FET

文件：31.32 Kbytes 页数：2 Pages

SEME-LAB