I.S. SIL2 Bus-Powered Digital Output Driver

FEATURES SIL 2 / SC 3 Output to Zone 0 Installation in Zone 2 Bus powered for NE loads Output short circuit proof Modbus RTU RS-485 for monitor & configuration Fully programmable operating parameters Three port isolation, Input/Output/Supply High Density, three channels per unit

文件：159.27 Kbytes 页数：2 Pages

GMI

I.S. SIL2 Bus-Powered Digital Output Driver

FEATURES SIL 2 / SC 3 Output to Zone 0 Installation in Zone 2 Bus powered for NE loads Output short circuit proof Modbus RTU RS-485 for monitor & configuration Fully programmable operating parameters Three port isolation, Input/Output/Supply High Density, three channels per unit

文件：159.27 Kbytes 页数：2 Pages

GMI

I.S. SIL2/3 Loop-Powered Digital Relay Output

FEATURES SIL 2 / SC 3 Output to Zone 0 Installation in Zone 2 2 fully independent channels Voltage level input Two SPDT Relay Output Signals Two port isolation, Input/Output/Supply High Reliability, SMD components High Density, two channels per unit

文件：142.68 Kbytes 页数：2 Pages

GMI

I.S. SIL2/3 Loop-Powered Digital Relay Output

FEATURES SIL 2 / SC 3 Output to Zone 0 Installation in Zone 2 2 fully independent channels Voltage level input Two SPDT Relay Output Signals Two port isolation, Input/Output/Supply High Reliability, SMD components High Density, two channels per unit

文件：142.68 Kbytes 页数：2 Pages

GMI

I.S. SIL2/3 Loop-Powered Digital Relay Output

FEATURES SIL 2 / SC 3 Output to Zone 0 Installation in Zone 2 2 fully independent channels Voltage level input Two SPDT Relay Output Signals Two port isolation, Input/Output/Supply High Reliability, SMD components High Density, two channels per unit

文件：142.68 Kbytes 页数：2 Pages

GMI

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ·Power amplifier applications ·Recommend for 30W high fidelity audio frequency amplifier out

文件：136.82 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ·Power amplifier applications ·Recommend for 30W high fidelity audio frequency amplifier o

文件：93.19 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ·Power amplifier applications ·Recommend for 30W high fidelity audio frequency amplifier out

文件：94.78 Kbytes 页数：3 Pages

SAVANTIC

LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL)

LOW FREQUENCY POWER AMPLIFIER ! Complement to 2SB595

文件：69.3 Kbytes 页数：1 Pages

WINGS

永盛电子

I.S. SIL2 2/4-Wire Transmitter Trip Amplifier

FEATURES SIL 2 / SC 3 Input from Zone 0/Div. 1 Installation in Zone 2/Div. 2 ±12 V Voltage Input 0/4-20 mA Active-Passive Input, Source-Sink Output Input and Output short circuit proof Modbus RTU RS-485 for monitor & configuration Out-of-range fault detection Optional alarm acknowledgemen

文件：154.67 Kbytes 页数：2 Pages

GMI