Complementary Silicon Power Transistors 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS

Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers for high power switching circuits. • Fast Switching —

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ONSEMI

安森美半导体

Low Saturation Voltage

DESCRIPTION • Low Saturation Voltage • Fast Switching Speed • Complement to Type D44VH Series APPLICATIONS • Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits.

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ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Low Saturation Voltage • Fast Switching Speed • Complement to Type D44VH Series APPLICATIONS • Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits.

文件：78.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • Low Saturation Voltage • Fast Switching Speed • Complement to Type D44VH Series APPLICATIONS • Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits.

文件：78.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Gate Driver

Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

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POWEREX

Complementary Silicon Power Transistors

VERY HIGH SPEED NPN POWER TRANSISTORS COMPLEMENTARY TO THE D45VH SERIES TheD44VH isan NPNpower transistor especially designed for use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where very fast switching and low-saturation voltage

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= -1.0V(Max)@ IC = -8A ·Fast Switching Speeds ·Complement to Type D44VH10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and

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ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Low Saturation Voltage • Fast Switching Speed • Complement to Type D44VH Series APPLICATIONS • Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits.

文件：78.68 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits. Features • Fast

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ONSEMI

安森美半导体

Complementary Silicon Power Transistors

DESCRIPTION • Low Saturation Voltage • Fast Switching Speed • Complement to Type D44VH Series APPLICATIONS • Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits.

文件：852.56 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司