DAC43508RTER

Marking：D43508；Package：WQFN；DACx3508 Octal, 8-Bit, 10-Bit, and 12-Bit, SPI, Buffered Voltage Output DACs in Tiny 3 × 3 WQFN Package

1Features •±1LSBDNL •Wideoperatingrange: –Powersupply:1.8Vto5.5V –Temperaturerange:–40°Cto+125°C •3-wireserialperipheralinterface(SPI) –VIH=2.4Vfor2.7V≤VDD≤5.5V –VIH=(VDD–0.3V)for1.8V≤VDD≤2.7V •LDACpinforsimultaneousoutputupdate •Verylowp

DEMD48-7

Marking：D48；Package：SOT-563；DUAL NPN/PNP PRE-BIASED TRANSISTOR

Features EpitaxialPlanarDieConstruction SurfaceMountPackageSuitedforAutomatedAssembly SimplifiesCircuitDesignandReducesBoardSpace LeadFree/RoHSCompliant(Note1) GreenDevice(Note2)

IDW40G65C5

Marking：D4065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1Description ThinQ!™Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.Thankstothemorecompactdesignandthin-wafer technology,thenewfamilyofproductsshowsimprovedefficiencyoverallload conditions,resultingfromboththeimprovedtherm

IDWD40G120C5

Marking：D4012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features Noreverserecoverycurrent/noforwardrecovery Highsurgecurrentcapability Temperatureindependentswitchingbehaviour Lowforwardvoltageevenathighoperatingtemperature Tightforwardvoltagedistribution Specifieddv/dtruggedness Pb-freeleadplating;RoHS

IDYH40G200C5

Marking：D4020C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ Schottky diode 2000 V G5

Features •VRRM=2000V •IF=40A •VF=1.5V •Noreverserecoverycurrent/noforwardrecovery •Highsurgecurrentcapability •Temperatureindependentswitchingbehavior •Lowforwardvoltageevenathighoperatingtemperature •Tightforwardvoltagedistribution •Specifieddv/d

KSD471A

Marking：D471A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features ComplementToKSB564A LowVCE(sat)

KSD471A-TA

Marking：D471A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features ComplementToKSB564A LowVCE(sat)

PJD40N04_L2_00001

Marking：D40N04；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD40N04-AU_L2_000A1

Marking：D40N04；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

PJD40N06A_L2_00001

Marking：D40N06A；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A