D3V3M1U2S9-TP

1-Line Uni-directional ESD DIODE

Features oLowoperatingvoltage:3.3V/ «Ultralowcapacitance:90pF Ultralowleakage:nAlevel oLowclampingvoltage o—IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:+30kV —IEC61000-4-4(EFT)40A(5/50ns) o2-pinleadlesspackage ThesearePb-FreeDevices

D3V3M2B3SO

2 CHANNEL ESD PROTECTION DIODE

Features LowClampingVoltage Bi-DirectionalESDProtectionofTwoLine Max.PeakPulsePower:PPP=180Wattp=8/20μs Max.PeakPulseCurrent:IPP=20Aattp=8/20μs IEC61000-4-2,>27kV(Air);>27kV(Contact) TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Halog

D3V3M2B3SO-7

Marking：RC3；Package：SOT23；2 CHANNEL ESD PROTECTION DIODE

Features LowClampingVoltage Bi-DirectionalESDProtectionofTwoLine Max.PeakPulsePower:PPP=180Wattp=8/20μs Max.PeakPulseCurrent:IPP=20Aattp=8/20μs IEC61000-4-2,>27kV(Air);>27kV(Contact) TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Halog

D3V3S1B2LP

HIGH SURGE BIDIRECTIONAL TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprint Area(1.08mmx0.68mmMax)SuitableforCompactPortable Electronics ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance To

D3V3S1B2LP-7B

Marking：S1；Package：X1-DFN1006-2；HIGH SURGE BIDIRECTIONAL TVS DIODE

Features LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprint Area(1.08mmx0.68mmMax)SuitableforCompactPortable Electronics ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance To

D3V3S1U2LP1610

1 CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications CellularHa

D3V3S1U2LP1610-7

Marking：PA2；Package：U-DFN1610-2；1 CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications CellularHa

D3V3S1U2LP1610Q

ONE CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDIODES™D3V3S1U2LP1610Q

D3V3S1U2LP1610Q-7

Marking：PA2；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDIODES™D3V3S1U2LP1610Q

D3V3X4U10LPQ

4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

Features ClampingVoltage:6Vat16AIEC61000-4-2 IEC61000-4-2(ESD):Air—±8kV,Contact—±8kV IEC61000-4-5(Lightning):3A(8/20μs) 4ChannelsofESDProtection Ultra-LowChannelInputCapacitanceof0.45pFTypical TLPDynamicResistance:0.3Ω TotallyLead-Free&FullyRoHS