丝印：D3NM60；Package：DPAK；N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

文件：723.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NM60；Package：IPAK；N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

文件：723.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.3 ?? 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

文件：723.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 1.3 廓, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

文件：711.43 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. ■ TYPICAL

文件：548.98 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体