PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE

Planar Rtpe Silicon Transistor For AF POWER Amplifier Use

文件：42.21 Kbytes 页数：1 Pages

SANYO

三洋

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

文件：92.4 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

文件：49.01 Kbytes 页数：4 Pages

UTC

友顺

POWER TRANSISTORS(3A,60V,30W)

3 AMPERE POWER TRANSISTOR 60 VOLT 30 WATTS

文件：115.15 Kbytes 页数：3 Pages

MOSPEC

统懋

NPN Silicon Epitaxial Power Transistor

Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507

文件：201.5 Kbytes 页数：4 Pages

WEITRON

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general-purpose amplifier and switching applications.

文件：194.98 Kbytes 页数：1 Pages

DCCOM

道全

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

文件：101.69 Kbytes 页数：3 Pages

SAVANTIC

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507

文件：30.57 Kbytes 页数：1 Pages

WINGS

永盛电子

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：54.65 Kbytes 页数：1 Pages

TEL

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

文件：93.73 Kbytes 页数：3 Pages

ISC

无锡固电