MJD3055

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularMJE3055T •DCCurrentGainSpecifiedto10A •HighCurrentGain-

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD3055

TO-252-2LPlastic-EncapsulateTransistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

MJD3055G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

MJD3055G

ComplementaryPowerTransistors

MJD3055G

ComplementaryPowerTransistors

MJD3055G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff

MJE3055

NPNSiliconPlastic-EncapsulateTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Capableof2.0WattsofPowerDissipation. •Collector-current10A •Collector-baseVoltage70V •Operatingandst

MJE3055

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MJE3055

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●GeneralPurposeandSwitchingApplications

MJE3055

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955 APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

MJE3055

Plastic-EncapsulatePowerTransistors

Plastic-EncapsulatePowerTransistors P/bLead(Pb)-Free

MJE3055

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MJE3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

MJE3055

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

MJE3055

SILICONEPITAXIALPLANARTRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

MJE3055

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

MJE3055

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MJE3055

TO-220-3LPlastic-EncapsulateTransistors

FEATURES GeneralPurposeandSwitchingApplications