丝印：D30；Package：EMT6；General purpose transistor (isolated transistors)

DTB713Z and DTC114E A are housed independently in a EMT6 package. Features 1) DTr1 : PNP digital transistor DTr2 : NPN digital transistor 2) Mounting possible with EMT3 automatic mounting machines. Applications DC / DC converter Motor driver

文件：192.64 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：D30；Package：DSBGA；LP3986 Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in DSBGA Package

1FEATURES 2• Miniature 8-I/O DSBGA Package • Stable With 1μF Ceramic and High Quality Tantalum Output Capacitors • Fast Turn-on • Two Independent Regulators • Logic Controlled Enable • Over Current and Thermal Protection APPLICATIONS • CDMA Cellular Handsets • GSM Cellular Handsets •

文件：578.06 Kbytes 页数：18 Pages

TI2

德州仪器

丝印：D30；Package：DSBGA；LP3986 Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in DSBGA Package

1FEATURES 2• Miniature 8-I/O DSBGA Package • Stable With 1μF Ceramic and High Quality Tantalum Output Capacitors • Fast Turn-on • Two Independent Regulators • Logic Controlled Enable • Over Current and Thermal Protection APPLICATIONS • CDMA Cellular Handsets • GSM Cellular Handsets •

文件：578.06 Kbytes 页数：18 Pages

TI2

德州仪器

丝印：D30；Package：EMT6；General purpose transistor (isolated transistors)

文件：175.03 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：D30；Package：EMT6；General purpose transistor (isolated transistors)

文件：129.43 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：D30；Package：SOT-23；SMD Zener

文件：195.91 Kbytes 页数：1 Pages

TAITRON

丝印：D306；Package：SOT530-1；Dual bus switch with level shifting

1. General description The CBTD3306 dual FET bus switch features independent line switches. Each switch is disabled when the associated output enable (nOE) input is HIGH. The CBTD3306 is characterized for operation from -40 °C to +85 °C. 2. Features and benefits • Designed to be used in 5 V t

文件：215.62 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：D3018B；Package：TO252；N-Ch 30V Fast Switching MOSFETs

Description The FKD3018B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD3018B meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approve

文件：839.23 Kbytes 页数：6 Pages

FETEK

台湾东沅

丝印：D3065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therma

文件：1.17544 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D3012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS

文件：1.07546 Mbytes 页数：12 Pages

Infineon

英飞凌