METAL GATE RF SILICON FET

文件：17.09 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

METAL GATE RF SILICON FET

文件：17.09 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 1, 2 and 3) • Qualified to AEC-Q101

文件：162.11 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 1, 2 and 3) • Qualified to AEC-Q101

文件：138.3 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions • Boost Appli

文件：375.12 Kbytes 页数：5 Pages

DIODES

美台半导体