D2230

METAL GATE RF SILICON FET

D2230UK

METAL GATE RF SILICON FET

DMN2230U

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •110mΩ@VGS=4.5V •145mΩ@VGS=2.5V •230mΩ@VGS=1.8V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) •QualifiedtoAEC-Q101

DMN2230U

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •110mΩ@VGS=4.5V •145mΩ@VGS=2.5V •230mΩ@VGS=1.8V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) •QualifiedtoAEC-Q101

DMN2230UQ

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions •BoostAppli

DSC2230

Low-JitterI2C/SPIProgrammableLVDSOscillator

FB2230

POLYETHYLENEBorstar

DESCRIPTION Borstar®FB2230isproducedusingtheproprietaryBorstar®bimodaltechnologyresultingineasyextrusionwith superiormechanicalproperties.Filmmadefromtheproductexhibitsexcellentmechanicalstrengthatnormalas wellaslowtemperature,goodsealingpropertiesandsuperior

FN2230

DC-BusbarEMC/RFIFilterforEVchargingapplications

Featuresandbenefits -FN222X,FN223XandFN224Xseriesoffilters providesstate-of-the-artEMIattenuationwitha choiceofthreeperformancelevels -ThefiltersarebuilttofitperfectlytohighpowerEV chargingapplications -Theshapeallowsaconvenientandspace-saving installation

HUN2230

NPNSiliconSurfaceMountTransistorwithMonolithicBiasResistorNetwork

Description Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase-emitterr

IPP-2230

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