Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：17.09 Kbytes 页数：2 Pages

SEME-LAB

Word-Wide 8 Meg SRAM Stik

FEATURES ● Organized as a high density 512k x 16 bit Stik™ ● Fast access time of 85 ns ● Unlimited write cycles ● Employs popular JEDEC standard 80-position SIMM connector ● Full ±10 operating range ● Read cycle time equals write cycle time ● Ultra-low standby current

文件：374.84 Kbytes 页数：10 Pages

DALLAS

Word-Wide 8 Meg SRAM Stik

文件：380.32 Kbytes 页数：10 Pages

MAXIM

美信

Screw-In Rubber Pocket Bumpers

文件：120.09 Kbytes 页数：1 Pages

HEYCO