Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

TT Electronics

METAL GATE RF SILICON FET

文件：15.24 Kbytes 页数：2 Pages

SEME-LAB

EconoRAM

DESCRIPTION The DS2223 and DS2224 EconoRAMs are fully static, micro–powered, read/write memories in low–cost TO–92 or SOT–223 packages. The DS2223 is organized as a serial 256 x 1 bit static read/write memory. The DS2224’s first 32 bits are lasered with a unique ID code at the time of manufactu

文件：102.84 Kbytes 页数：10 Pages

DALLAS

EconoRAM

DESCRIPTION The DS2223 and DS2224 EconoRAMs are fully static, micro–powered, read/write memories in low–cost TO–92 or SOT–223 packages. The DS2223 is organized as a serial 256 x 1 bit static read/write memory. The DS2224’s first 32 bits are lasered with a unique ID code at the time of manufactu

文件：102.84 Kbytes 页数：10 Pages

DALLAS

EconoRAM

DESCRIPTION The DS2223 and DS2224 EconoRAMs are fully static, micro–powered, read/write memories in low–cost TO–92 or SOT–223 packages. The DS2223 is organized as a serial 256 x 1 bit static read/write memory. The DS2224’s first 32 bits are lasered with a unique ID code at the time of manufactu

文件：102.84 Kbytes 页数：10 Pages

DALLAS